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Yüzey Si ve GaAs Tek Kristallerinin Düşük Sıcaklıklı Vakum-Termal Temizliği Yöntemi

Year 2023, Volume: 26 Issue: 4, 1441 - 1444, 01.12.2023

Gunel Imanova

https://doi.org/10.2339/politeknik.1119884
Cited By: 1

Abstract

Makale, yazarlar tarafından geliştirilen, Si ve GaAs tek kristallerinin yüzeyinin düşük sıcaklıkta vakum-termal temizleme yöntemi hakkında rapor veriyor, bu, Ba+ iyonlarının (ve ya alkali elementlerin) Si ve GaAs kristallerine önceden ultra yüksek ile temizlenmiş implantasyonundan oluşuyor. İyon aşındırma ve ardından 800 K - 15 dakika ve 1000 K'de 30 dakika olmak üzere iki aşamalı tavlama ile vakum edilmişdir. Etkin temizlemenin etkisi, aktif olan Ba+ ve alkali elementlerin iyonlarının ilk aşamada safsızlık atomları (O, C, S, N vb.) ısıtmanın ikinci aşamasından sonra kirliliklerdir.

Keywords

Tek kristal yüzey ultra yüksek vakum temizleme implantasyon alma katmanı

References

  • [1] Oura, K., Lifshits, V.G., Saranin, A.A., Zotov, A.V., Katayama, M., “Surface Science: An Introduction”, Spri.Sci. & Busi.Med., 440: (2013).
  • [2] Malysheva, I.A., “Technology of production of microelectronic devices”, M: Ener., 74-75, (1980).
  • [3] Roth, A., “Vacuum technology”, Amster. Elsev., 554: (1990).
  • [4] Norichika, Y., Takehiko, S., Minoru, M., Pat. USА 2007/0077191A1 Pub. Date: Apr. 5, (2007).
  • [5] Konov, V.I., Pimenov, S.M., Prokhorov, A.M., Chapliev, N.I., Russ., Sur.Phy.Chem.Mech., 12: 1-98, (1987).
  • [6] Nemtsev, G.Z., Pekarev, A.I., Chistyakov, Yu.D., Microelec., 12(5): 432-439, (1983).
  • [7] Rysbaev, A.S., “Changes in the secondary-emission properties of the Si surface during ion implantation and subsequent annealing”, Rad. Engine. and elect., 46(7):. 883-885, (2001).
  • [8] Normuradov, M.T., Rumi, D.S., Rysbaev, A.S., Izv. “Academy of Sciences of the Uzbek SSR”. Ser. Phys-Math., 4: 70-73, (1986).
  • [9] Dobretsov, L.N., Gomoyunova, M.V., “Emission electronics”, M.:Nau., 1-408, (1966).
  • [10] Utamuradova, Sh.B., Tursunmetova, Z.A., Nasriddinov, S.S., Abraeva, S.T., Abstracts of the 50th International Tulinov Conference on the Physics of the Interaction of Charged Particles with Crystals, 1-145, (2020).
  • [11] Risbaev, A.S., Khujaniyazov, J.B., Bekpulatov, I.R., Rakhimov, A.M., J.of Surf.Inv.: X-ray., Synchrotron and Neutron Techniques, 11(5): 994–999, (2017).
  • [12] Imanova, G., Bekpulatov, I. “Investigation on the Electronic Structure of Nanosized Barium Monosilicide Films Produced by Low-energy Implantation of Ba+ Ions in Si”, Amer. Jou. Of Nan. Rese. and Appli., 9(4): 32-35, (2021).
  • [13] Kozlenko, D.P., Dang, N.T., Jabarov S.H., “Pressure-induced modifications of the magnetic order in the spin-chain compound Ca3Co2O6”, Phys. Rev. B, 98, 134435, (2018).
  • [14] Mirzayev, M.N., Jabarov, S.H., “X-ray diffraction and thermodynamics kinetics of SiB6 under gamma irradiation dose”, Silicon, 11: 2499–2504, (2019).
  • [15] Mirzayev, M.N., “Influence of gamma irradiation on the surface morphology, XRD and thermophysical properties of silicide hexoboride”, Mod. Phy. Lett. B, 32(14): 1850151, (2018).
  • [16] Agayev, T., Imanova. G., Aliyev A., “Influence of gamma radiation on current density and volt–ampere characteristics of metallic zirconium”, Inter. Jour. of Mod. Phy. B, 36(19): 2250115, (2022).
  • [17] Imanova, G.T.. Agayev, T.N., Jabarov, S.H., “Investigation of structural and optical properties of zirconia dioxide nanoparticles by radiation and thermal methods”, Mod. Phy. Lett. B, 35(02): 2150050, (2021).

Method for Low-Temperature Vacuum-Thermal Cleaning of Surface Single Crystals Si and GaAs

Year 2023, Volume: 26 Issue: 4, 1441 - 1444, 01.12.2023

Gunel Imanova

https://doi.org/10.2339/politeknik.1119884
Cited By: 1

Abstract

The paper reports on a method of low-temperature vacuum-thermal cleaning of the surface of Si and GaAs single crystals developed by the authors, which consists in implanting Ba+ ions (or alkaline elements) into Si and GaAs crystals preliminarily cleaned by ultra-high vacuum by ion etching and subsequent annealing in two stage at 800 K - 15 minutes and at 1000 K for 30 minutes. The effect of effective cleaning is achieved due to the fact that the introduced ions of Ba+ and alkaline elements, being active, form compounds with impurity atoms (O, C, S, N, etc.) at the first stage and are removed together with impurities after the second stage of heating.

Keywords

single crystal low-temperature Si and GaAs surface ultrahigh vacuum cleaning implantation gettering layer

References

  • [1] Oura, K., Lifshits, V.G., Saranin, A.A., Zotov, A.V., Katayama, M., “Surface Science: An Introduction”, Spri.Sci. & Busi.Med., 440: (2013).
  • [2] Malysheva, I.A., “Technology of production of microelectronic devices”, M: Ener., 74-75, (1980).
  • [3] Roth, A., “Vacuum technology”, Amster. Elsev., 554: (1990).
  • [4] Norichika, Y., Takehiko, S., Minoru, M., Pat. USА 2007/0077191A1 Pub. Date: Apr. 5, (2007).
  • [5] Konov, V.I., Pimenov, S.M., Prokhorov, A.M., Chapliev, N.I., Russ., Sur.Phy.Chem.Mech., 12: 1-98, (1987).
  • [6] Nemtsev, G.Z., Pekarev, A.I., Chistyakov, Yu.D., Microelec., 12(5): 432-439, (1983).
  • [7] Rysbaev, A.S., “Changes in the secondary-emission properties of the Si surface during ion implantation and subsequent annealing”, Rad. Engine. and elect., 46(7):. 883-885, (2001).
  • [8] Normuradov, M.T., Rumi, D.S., Rysbaev, A.S., Izv. “Academy of Sciences of the Uzbek SSR”. Ser. Phys-Math., 4: 70-73, (1986).
  • [9] Dobretsov, L.N., Gomoyunova, M.V., “Emission electronics”, M.:Nau., 1-408, (1966).
  • [10] Utamuradova, Sh.B., Tursunmetova, Z.A., Nasriddinov, S.S., Abraeva, S.T., Abstracts of the 50th International Tulinov Conference on the Physics of the Interaction of Charged Particles with Crystals, 1-145, (2020).
  • [11] Risbaev, A.S., Khujaniyazov, J.B., Bekpulatov, I.R., Rakhimov, A.M., J.of Surf.Inv.: X-ray., Synchrotron and Neutron Techniques, 11(5): 994–999, (2017).
  • [12] Imanova, G., Bekpulatov, I. “Investigation on the Electronic Structure of Nanosized Barium Monosilicide Films Produced by Low-energy Implantation of Ba+ Ions in Si”, Amer. Jou. Of Nan. Rese. and Appli., 9(4): 32-35, (2021).
  • [13] Kozlenko, D.P., Dang, N.T., Jabarov S.H., “Pressure-induced modifications of the magnetic order in the spin-chain compound Ca3Co2O6”, Phys. Rev. B, 98, 134435, (2018).
  • [14] Mirzayev, M.N., Jabarov, S.H., “X-ray diffraction and thermodynamics kinetics of SiB6 under gamma irradiation dose”, Silicon, 11: 2499–2504, (2019).
  • [15] Mirzayev, M.N., “Influence of gamma irradiation on the surface morphology, XRD and thermophysical properties of silicide hexoboride”, Mod. Phy. Lett. B, 32(14): 1850151, (2018).
  • [16] Agayev, T., Imanova. G., Aliyev A., “Influence of gamma radiation on current density and volt–ampere characteristics of metallic zirconium”, Inter. Jour. of Mod. Phy. B, 36(19): 2250115, (2022).
  • [17] Imanova, G.T.. Agayev, T.N., Jabarov, S.H., “Investigation of structural and optical properties of zirconia dioxide nanoparticles by radiation and thermal methods”, Mod. Phy. Lett. B, 35(02): 2150050, (2021).
There are 17 citations in total.

Details

Primary Language English
Subjects Engineering
Journal Section Research Article
Authors

Gunel Imanova 0000-0003-3275-300X

Publication Date December 1, 2023
Submission Date May 22, 2022
Published in Issue Year 2023 Volume: 26 Issue: 4

Cite

APA Imanova, G. (2023). Method for Low-Temperature Vacuum-Thermal Cleaning of Surface Single Crystals Si and GaAs. Politeknik Dergisi, 26(4), 1441-1444. https://doi.org/10.2339/politeknik.1119884
AMA Imanova G. Method for Low-Temperature Vacuum-Thermal Cleaning of Surface Single Crystals Si and GaAs. Politeknik Dergisi. December 2023;26(4):1441-1444. doi:10.2339/politeknik.1119884
Chicago Imanova, Gunel. “Method for Low-Temperature Vacuum-Thermal Cleaning of Surface Single Crystals Si and GaAs”. Politeknik Dergisi 26, no. 4 (December 2023): 1441-44. https://doi.org/10.2339/politeknik.1119884.
EndNote Imanova G (December 1, 2023) Method for Low-Temperature Vacuum-Thermal Cleaning of Surface Single Crystals Si and GaAs. Politeknik Dergisi 26 4 1441–1444.
IEEE G. Imanova, “Method for Low-Temperature Vacuum-Thermal Cleaning of Surface Single Crystals Si and GaAs”, Politeknik Dergisi, vol. 26, no. 4, pp. 1441–1444, 2023, doi: 10.2339/politeknik.1119884.
ISNAD Imanova, Gunel. “Method for Low-Temperature Vacuum-Thermal Cleaning of Surface Single Crystals Si and GaAs”. Politeknik Dergisi 26/4 (December 2023), 1441-1444. https://doi.org/10.2339/politeknik.1119884.
JAMA Imanova G. Method for Low-Temperature Vacuum-Thermal Cleaning of Surface Single Crystals Si and GaAs. Politeknik Dergisi. 2023;26:1441–1444.
MLA Imanova, Gunel. “Method for Low-Temperature Vacuum-Thermal Cleaning of Surface Single Crystals Si and GaAs”. Politeknik Dergisi, vol. 26, no. 4, 2023, pp. 1441-4, doi:10.2339/politeknik.1119884.
Vancouver Imanova G. Method for Low-Temperature Vacuum-Thermal Cleaning of Surface Single Crystals Si and GaAs. Politeknik Dergisi. 2023;26(4):1441-4.

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