The temperature dependence of the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of an Au/n-type Si Schottky barrier diode (SBD) with a PEDOT:PSS interlayer was investigated. The SBD parameters, such as Schottky barrier height (Φ_B), ideality factor (n), saturation current (I₀), doping concentration (N_D), and series resistance (R_s), were obtained as a function of temperature. The Richardson constant (A**) obtained from the In(I_o/T²) versus 1000/T plot was much less than the theoretical value for n-Si. The mean Schottky barrier height (\barΦ _bo) and standard deviation (σ₀) calculated using the apparent Schottky barrier height (Φ_ap) versus 1/2kT plot were 1.26 eV and 0.15 eV, respectively. From a fit of the modified Richardson plot of ln(I₀/T²) − (qσ)²/2(kT)² versus 1000/T, the A** was extracted as 134 A/cm² K², which was close to the theoretical value of the n-Si. The interface state densities obtained from the Au/PEDOT:PSS/n-Si SBD decreased with increasing temperature. Furthermore, the conduction mechanism dominating the reverse-bias leakage current in Au/PEDOT:PSS/n-Si SBD was described and discussed.