SrIrO₃ thin films were prepared by laser ablating a monoclinic SrIrO₃ target at the substrate temperature of 973 K with oxygen pressure ranging from 4 to 67 Pa. The glancing angle incidence X-ray diffraction (GIXRD) and micro-X-ray photoelectron spectroscopy (XPS) results suggested that SrIrO₃ thin films were obtained. The resistivities and transmittance of SrIrO₃ thin films at room temperature were in the range from 0.93 to 4.8×10⁻⁵ Ωm and from 0.20 to 0.30 in the wavelength range of 600–800 nm, respectively. The electrical property of SrIrO₃ thin films changed from semiconductive to metallic with increasing the ablation oxygen pressure.