Elevated Temperature Sensors for On-Line Critical Equipment Health Monitoring
The objective of the program was to improve high temperature piezoelectric aluminum nitride (AlN) sensor technology to make it useful for instrumentation and health monitoring of current and future electrical power generation equipment. Improvements were aimed primarily at extending the useful temperature range of the sensor from approximately 700 C to above 1000 C, and investigating ultrasonic coupling to objects at these temperatures and tailoring high temperature coupling for use with the sensor. During the project, the chemical vapor deposition (CVD) AlN deposition process was successfully transferred from film production on tungsten carbide substrates to titanium alloy and silicon carbide (SiC) substrates. Film adhesion under thermal cycling was found to be poor, and additional substrate materials and surface preparations were evaluated. A new, porous SiC substrate improved the performance but not to the point of making the films useful for sensors. Near the end of the program, a new family of high temperature piezoelectric materials came to the attention of the program. Samples of langasite, the most promising member of this family, were obtained and experimental data showed promise for use up to the 1000 C target temperature. In parallel, research successfully determined that metal foil under moderate pressure provided a practical method of coupling ultrasound at high temperature. A conceptual sensor was designed based upon these methods and was tested in the laboratory.
- Research Organization:
- University Of Dayton
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- FG26-02NT41534
- OSTI ID:
- 898344
- Country of Publication:
- United States
- Language:
- English
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