ADVANCED SOLID STATE SENSORS FOR VISION 21 SYSTEMS
Device fabrication and characterization studies relevant to the development of silicon carbide (SiC) based gas and temperature sensors have been performed. Initial studies of Pd deposition on Si were performed since the procedures for Si substrate preparation were well known to us. This allowed us to gain experience in controlling the deposition process while continuing to investigate methods of preparing the SiC substrate surface. Studies of SiC surface preparation were carried out under a separate contract. As our SiC substrate preparation techniques improved, studies of Pd deposition on SiC were performed and the thermal stability of Pd/SiC interfaces (i.e., the critical sensor component) was characterized. These studies have demonstrated that the Pd/SiC interface is remarkably stable at temperatures up to 670 C. At this time, we are moving rapidly to a point where the oxide overlayer can be reproducibly reduced to an acceptable level and large areas of the substrate can be reproducibly produced with the surface roughness reduced to the atomic scale. We believe that this will substantially improve the thermal stability of the Pd/SiC interface. In all these studies, techniques are being used that could readily be incorporated into commercial processes. Moreover, as a result of our ultrahigh vacuum approach to device fabrication, we are in a position to monitor and document each step of the process and to relate this data to device characteristics and performance. Experiments are now underway to study the effects of improved substrate surfaces on these interfaces. Device modeling and electrical characterization studies were performed to complement the device fabrication studies. These included temperature dependent I-V and series resistance measurements for SiC p-n junctions. Presently, Pd/SiC structures produced in the above deposition experiments are undergoing electrical characterization.
- Research Organization:
- West Virginia University (US)
- Sponsoring Organization:
- (US)
- DOE Contract Number:
- FG26-01NT41273
- OSTI ID:
- 824767
- Resource Relation:
- Other Information: PBD: 12 Feb 2003
- Country of Publication:
- United States
- Language:
- English
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