Silicon ribbon growth by a capillary action shaping technique. Quarterly technical progress report No. 6
The effects of capillary die design on dopant distribution are described. A new technique for thermal geometry control utilizing inert-gas purging was implemented. Routine 38-mm-wide ribbon growth was demonstrated. 50-mm-wide ribbon growth in a length over one meter was achieved. A technology projection and guide to future silicon sheet growth was completed. (WDM)
- Research Organization:
- International Business Machines Corp., Hopewell Junction, NY (USA). East Fishkill Lab.
- DOE Contract Number:
- NAS-7-100-954144
- OSTI ID:
- 7311449
- Report Number(s):
- ERDA/JPL/954144-76/4
- Country of Publication:
- United States
- Language:
- English
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