Study of substrate diffusion in epitaxial n-type CdSe films grown on GaAs (001) by pulsed laser ablation
- Univ. of Tennessee, Knoxville, TN (United States)
- Oak Ridge National Lab., TN (United States). Solid State Div.
N-type CdSe films with thicknesses of 470--630 nm were grown on (001) and 2{degree}-miscut GaAs wafers by ArF (193 nm) pulsed laser ablation of stoichiometric CdSe targets at platen temperatures (T{sub p}) of 250--425 C in vacuum and ambient Ar gas. Film-substrate interdiffusion was studied with Auger depth profiling, as well as energy dispersive x-ray fluorescent spectroscopy (EDS). Both techniques showed that extensive interdiffusion took place at the film-substrate interface for CdSe films grown at T{sub p} {ge} 355 C but was greatly reduced at T{sub p} = 250 C. Tilting the substrate to be approximately parallel to the ablation plume as well as decreasing the ambient gas pressure also reduced film-substrate interdiffusion.
- Research Organization:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Sponsoring Organization:
- USDOE Office of Energy Research, Washington, DC (United States)
- DOE Contract Number:
- AC05-96OR22464
- OSTI ID:
- 672107
- Report Number(s):
- ORNL/CP-97498; CONF-980405-; ON: DE98004888; TRN: AHC2DT07%%267
- Resource Relation:
- Conference: Spring meeting of the Materials Research Society, San Francisco, CA (United States), 13-17 Apr 1998; Other Information: PBD: Apr 1998
- Country of Publication:
- United States
- Language:
- English
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