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Title: Irradiation-induced phase transformations. Final report, July 1, 1995--June 30, 1997

Abstract

During the course of this two year program, the authors attention focused largely on the synthesis, structure and properties of group IV semiconductor nanocrystals. They also drew to a close the investigations of defects in amorphous silicon. Work on control of nucleation in amorphous silicon and germanium is ongoing, and has taken important new directions at the interface between basic and applied research under DOE Office of Energy Efficiency support via a subcontract from the National Renewable Energy Laboratory and the BES Center for Synthesis and Processing of Advanced Materials` project on High Efficiency Thin Film Photovoltaics. During the course of this project, scientific and scholarly output included: (1) 10 invited talks related to work on Si and Ge nanocrystals; (2) 5 Applied Physics Letters published on Si and Ge nanocrystals; (3) 3 Caltech Ph.D. Theses on Si and Ge Nanocrystal work; and (4) New directions on control of crystallization in thin semiconductor films.

Authors:
Publication Date:
Research Org.:
California Inst. of Tech., Thomas J. Watson Lab. of Applied Physics, Pasadena, CA (United States)
Sponsoring Org.:
USDOE Office of Energy Research, Washington, DC (United States)
OSTI Identifier:
656799
Report Number(s):
DOE/ER/45395-T2
ON: DE98006449; TRN: 99:000484
DOE Contract Number:  
FG03-89ER45395
Resource Type:
Technical Report
Resource Relation:
Other Information: PBD: 1 Aug 1998
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 14 SOLAR ENERGY; PROGRESS REPORT; SEMICONDUCTOR MATERIALS; CRYSTAL DEFECTS; SILICON; GERMANIUM; PHOTOVOLTAIC CELLS; ION IMPLANTATION; LUMINESCENCE; XENON IONS; PHYSICAL RADIATION EFFECTS

Citation Formats

Atwater, H A. Irradiation-induced phase transformations. Final report, July 1, 1995--June 30, 1997. United States: N. p., 1998. Web. doi:10.2172/656799.
Atwater, H A. Irradiation-induced phase transformations. Final report, July 1, 1995--June 30, 1997. United States. https://doi.org/10.2172/656799
Atwater, H A. 1998. "Irradiation-induced phase transformations. Final report, July 1, 1995--June 30, 1997". United States. https://doi.org/10.2172/656799. https://www.osti.gov/servlets/purl/656799.
@article{osti_656799,
title = {Irradiation-induced phase transformations. Final report, July 1, 1995--June 30, 1997},
author = {Atwater, H A},
abstractNote = {During the course of this two year program, the authors attention focused largely on the synthesis, structure and properties of group IV semiconductor nanocrystals. They also drew to a close the investigations of defects in amorphous silicon. Work on control of nucleation in amorphous silicon and germanium is ongoing, and has taken important new directions at the interface between basic and applied research under DOE Office of Energy Efficiency support via a subcontract from the National Renewable Energy Laboratory and the BES Center for Synthesis and Processing of Advanced Materials` project on High Efficiency Thin Film Photovoltaics. During the course of this project, scientific and scholarly output included: (1) 10 invited talks related to work on Si and Ge nanocrystals; (2) 5 Applied Physics Letters published on Si and Ge nanocrystals; (3) 3 Caltech Ph.D. Theses on Si and Ge Nanocrystal work; and (4) New directions on control of crystallization in thin semiconductor films.},
doi = {10.2172/656799},
url = {https://www.osti.gov/biblio/656799}, journal = {},
number = ,
volume = ,
place = {United States},
year = {Sat Aug 01 00:00:00 EDT 1998},
month = {Sat Aug 01 00:00:00 EDT 1998}
}