Cadmium sulfide/copper sulfide heterojunction cell research by sputter deposition. Quarterly technical progress report, March 1, 1981-June 30, 1981
A second series of hybrid cells with sputter-deposited Cu/sub 2/S layers has been fabricated. An efficiency of about 4 3/4%, without antireflection coating, was achieved for one of the cells. This result approaches the 5 3/4% which was achieved in the first set (different Cu/sub 2/S deposition conditions) and confirms the viability of the sputtering process for this application. Significant progress has been made in fabricating all-sputtered cells with CdS layers deposited by planar magnetron reactive sputtering. Efficiencies of approximately 3%, without antireflection coatings, have been achieved in the as-deposited state for seven cells. Individual cells have yielded a J/sub sc/ of 12 mA/cm/sup 2/, a V/sub oc/ of 0.53V, and a fill factor of 0.72. Taken together these parameters would yield an efficiency of 4 1/2%. A strong coupling is found between the properties of the Cu/sub 2/S and CdS layers. However, the conditions which maximize J/sub sc/, V/sub oc/ and the fill factor do not appear to be mutually exclusive. Reflectance measurements indicate that 30% or more of the incident radiation is being reflected from the front surface of the cells over the wavelength range of the solar spectrum. Thus optimization of the cell parameters with a suitable antireflection coating should yield cell efficiencies of about 6%. Characterization of the junctions formed in the all-sputtered cells under near-optimum deposition conditions indicates that they have remarkable properties in their as-deposited state, being very similar to high performance conventional cells after heat treatment. Junction ideality factors are about unity in the light, with J/sub 0/ values of about 2 x 10/sup -8/ mA/cm/sup 2/. Interface recombination velocities are as low as a few times 10/sup 5/ cm/sec. CdS depletion layer widths are about 2000 nm in the dark and collapse to about 200 nm under illumination.
- Research Organization:
- Solar Energy Research Inst. (SERI), Golden, CO (United States); TELIC Corp., Santa Monica, CA (USA)
- DOE Contract Number:
- AC02-77CH00178
- OSTI ID:
- 5618874
- Report Number(s):
- SERI/PR-9296-T2; ON: DE82006851
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
CADMIUM SULFIDE SOLAR CELLS
ELECTRIC CURRENTS
SPUTTERING
COPPER SULFIDES
ANTIREFLECTION COATINGS
DEPLETION LAYER
DESIGN
EFFICIENCY
ELECTRIC POTENTIAL
FABRICATION
FILL FACTORS
HETEROJUNCTIONS
MAGNETRONS
OPTIMIZATION
PHOTOLUMINESCENCE
RECOMBINATION
REFLECTIVITY
CHALCOGENIDES
COATINGS
COPPER COMPOUNDS
CURRENTS
DIRECT ENERGY CONVERTERS
ELECTRON TUBES
ELECTRONIC EQUIPMENT
EQUIPMENT
JUNCTIONS
LAYERS
LUMINESCENCE
MICROWAVE EQUIPMENT
MICROWAVE TUBES
OPTICAL PROPERTIES
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
SEMICONDUCTOR JUNCTIONS
SOLAR CELLS
SOLAR EQUIPMENT
SULFIDES
SULFUR COMPOUNDS
SURFACE PROPERTIES
TRANSITION ELEMENT COMPOUNDS
140501* - Solar Energy Conversion- Photovoltaic Conversion