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Title: Development of a polysilicon process based on chemical vapor deposition (Phase 1). First quarterly progress report, 6 October-31 December 1979

Abstract

The goal of this program is to demonstrate that a dichlorosilane based reductive chemical vapor deposition (CVD) process is capable of producing, at low cost, high quality polycrystalline silicon. Physical form and purity of this material will be consistent with LSA material requirements for use in the manufacture of high efficiency solar cells. Chemical processes involved in achieving the objective are reviewed with emphasis placed on advantages of this process when compared with existing polycrystalline silicon production technology. Installation of a CVD reactor with associated analytical instrumentation is described. Preliminary reactor data has been favorable demonstrating the anticipated increased deposition rate and conversion efficiency when dichlorosilane decomposition is compared with trichlorosilane decomposition. No serious problems have been encountered which might limit dichlorosilane use as a reactor feed material. Design considerations for a process development unit (PDU) for dichlorosilane synthesis are reviewed. A design which effectively suppresses monochlorosilane during the redistribution of trichlorosilane was decided upon and its implementation is described. The PDU will be used to collect data on optimization of the redistribution process as well as to determine product quality. Based on experimental data collected during the first quarter along with already available data on the redistribution and hydrogenationmore » processes, a preliminary mass balance is established.« less

Authors:
; ; ; ;
Publication Date:
Research Org.:
Hemlock Semiconductor Corp., MI (USA)
OSTI Identifier:
5491926
Report Number(s):
DOE/JPL/955533-79/1
DOE Contract Number:  
NAS-7-100-955533
Resource Type:
Technical Report
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; SILICON; CHEMICAL VAPOR DEPOSITION; PRODUCTION; CHEMICAL REACTIONS; CHEMICAL REACTORS; CHLORINE COMPOUNDS; DESIGN; HYDROGENATION; PERFORMANCE; POLYCRYSTALS; PROCESS DEVELOPMENT UNITS; SILANES; SILICON SOLAR CELLS; SYNTHESIS; VAPOR DEPOSITED COATINGS; CHEMICAL COATING; COATINGS; CRYSTALS; DEPOSITION; DIRECT ENERGY CONVERTERS; ELEMENTS; EQUIPMENT; FUNCTIONAL MODELS; HALOGEN COMPOUNDS; HYDRIDES; HYDROGEN COMPOUNDS; PHOTOELECTRIC CELLS; PHOTOVOLTAIC CELLS; SEMIMETALS; SILICON COMPOUNDS; SOLAR CELLS; SOLAR EQUIPMENT; SURFACE COATING; 140501* - Solar Energy Conversion- Photovoltaic Conversion; 360601 - Other Materials- Preparation & Manufacture

Citation Formats

McCormick, J. R., Arvidson, A., Plahutnik, F., Sawyer, D., and Sharp, K. Development of a polysilicon process based on chemical vapor deposition (Phase 1). First quarterly progress report, 6 October-31 December 1979. United States: N. p., 1980. Web. doi:10.2172/5491926.
McCormick, J. R., Arvidson, A., Plahutnik, F., Sawyer, D., & Sharp, K. Development of a polysilicon process based on chemical vapor deposition (Phase 1). First quarterly progress report, 6 October-31 December 1979. United States. https://doi.org/10.2172/5491926
McCormick, J. R., Arvidson, A., Plahutnik, F., Sawyer, D., and Sharp, K. 1980. "Development of a polysilicon process based on chemical vapor deposition (Phase 1). First quarterly progress report, 6 October-31 December 1979". United States. https://doi.org/10.2172/5491926. https://www.osti.gov/servlets/purl/5491926.
@article{osti_5491926,
title = {Development of a polysilicon process based on chemical vapor deposition (Phase 1). First quarterly progress report, 6 October-31 December 1979},
author = {McCormick, J. R. and Arvidson, A. and Plahutnik, F. and Sawyer, D. and Sharp, K.},
abstractNote = {The goal of this program is to demonstrate that a dichlorosilane based reductive chemical vapor deposition (CVD) process is capable of producing, at low cost, high quality polycrystalline silicon. Physical form and purity of this material will be consistent with LSA material requirements for use in the manufacture of high efficiency solar cells. Chemical processes involved in achieving the objective are reviewed with emphasis placed on advantages of this process when compared with existing polycrystalline silicon production technology. Installation of a CVD reactor with associated analytical instrumentation is described. Preliminary reactor data has been favorable demonstrating the anticipated increased deposition rate and conversion efficiency when dichlorosilane decomposition is compared with trichlorosilane decomposition. No serious problems have been encountered which might limit dichlorosilane use as a reactor feed material. Design considerations for a process development unit (PDU) for dichlorosilane synthesis are reviewed. A design which effectively suppresses monochlorosilane during the redistribution of trichlorosilane was decided upon and its implementation is described. The PDU will be used to collect data on optimization of the redistribution process as well as to determine product quality. Based on experimental data collected during the first quarter along with already available data on the redistribution and hydrogenation processes, a preliminary mass balance is established.},
doi = {10.2172/5491926},
url = {https://www.osti.gov/biblio/5491926}, journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jan 01 00:00:00 EST 1980},
month = {Tue Jan 01 00:00:00 EST 1980}
}