Magnetic field dependence of up-converted photoluminescence in partially ordered GaInP{sub 2}/GaAs up to 23 T
- MPIF/CNRS, Grenoble (France). Grenoble High Magnetic Field Lab.
- Univ. of California, Berkeley, CA (United States). Dept. of Physics
- Nippon Sanso Tsukuba Lab., Tsukuba City (Japan)
The influence of a strong magnetic field on the up-converted photoluminescence (PL) spectra of partially ordered layers of GaInP{sub 2} grown on GaAs substrate have been investigated. The up-converted PL spectra exhibit 2 peaks. The position of the low energy peak is close to that of the peak observed in Pl spectra excited by above GaInP{sub 2} bandgap light while the other peak occurs at about 30 meV higher in energy. Both peaks show a linear dependence on B between 0 and 23 T suggesting that free carriers with effective masses of 0.084 m{sub 0} and 0.24m{sub 0} (m{sub 0} is the free electron mass) are involved in these transitions. They interpret the low energy peak as originating from the recombination of localized holes with free electrons while the high energy peak is related to the recombination of localized electrons with free holes.
- Research Organization:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Sponsoring Organization:
- USDOE Office of Energy Research, Washington, DC (United States)
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 446412
- Report Number(s):
- LBNL-39428; CONF-960781-10; ON: DE97003473; TRN: AHC29706%%118
- Resource Relation:
- Conference: International conference on physics of semiconductors, Berlin (Germany), 21-26 Jul 1996; Other Information: PBD: Sep 1996
- Country of Publication:
- United States
- Language:
- English
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