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Title: Reaction studies of hot silicon and germanium radicals. Progress report, September 1, 1972--August 31, 1973

Technical Report ·
DOI:https://doi.org/10.2172/4398879· OSTI ID:4398879

Progress was made in the following major areas: a. primary reactions of recoiling silicon atoms and the mode of formation of silylene; b. elucidation of the role of ionic reactions in the chemistry of recoiling silicon atoms; c. kinetics of addition of silyl radicals to olefins; d. flow-discharge kinetic measurements of the rates of reaction of /sup 2/P/sub 3/2 and /sup 2/P/sub 1/2 chlorine atoms with saturated and unsaturated substrates. (auth)

Research Organization:
Washington Univ., St. Louis, Mo. (USA). Dept. of Chemistry
DOE Contract Number:
AT(11-1)-1713
NSA Number:
NSA-29-000200
OSTI ID:
4398879
Report Number(s):
COO-1713-43
Resource Relation:
Other Information: Orig. Receipt Date: 30-JUN-74
Country of Publication:
United States
Language:
English