Numerical modeling of vertical cavity semiconductor lasers
Abstract
A vertical cavity surface emitting laser (VCSEL) is a diode laser whose optical cavity is formed by growing or depositing DBR mirror stacks that sandwich an active gain region. The resulting short cavity supports lasing into a single longitudinal mode normal to the wafer, making these devices ideal for a multitude of applications, ranging from high-speed communication to high-power sources (from 2D arrays). This report describes the development of a numerical VCSEL model, whose goal is to both further their understanding of these complex devices and provide a tool for accurate design and data analysis.
- Authors:
- Publication Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE, Washington, DC (United States)
- OSTI Identifier:
- 378906
- Report Number(s):
- SAND-96-2127
ON: DE96015338; TRN: AHC29620%%120
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Technical Report
- Resource Relation:
- Other Information: PBD: Aug 1996
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES; SEMICONDUCTOR LASERS; MATHEMATICAL MODELS; LASER MIRRORS; BRAGG REFLECTION; LASER CAVITIES; BENCHMARKS; COMPUTER CODES; NUMERICAL ANALYSIS
Citation Formats
Chow, W W, and Hadley, G R. Numerical modeling of vertical cavity semiconductor lasers. United States: N. p., 1996.
Web. doi:10.2172/378906.
Chow, W W, & Hadley, G R. Numerical modeling of vertical cavity semiconductor lasers. United States. https://doi.org/10.2172/378906
Chow, W W, and Hadley, G R. 1996.
"Numerical modeling of vertical cavity semiconductor lasers". United States. https://doi.org/10.2172/378906. https://www.osti.gov/servlets/purl/378906.
@article{osti_378906,
title = {Numerical modeling of vertical cavity semiconductor lasers},
author = {Chow, W W and Hadley, G R},
abstractNote = {A vertical cavity surface emitting laser (VCSEL) is a diode laser whose optical cavity is formed by growing or depositing DBR mirror stacks that sandwich an active gain region. The resulting short cavity supports lasing into a single longitudinal mode normal to the wafer, making these devices ideal for a multitude of applications, ranging from high-speed communication to high-power sources (from 2D arrays). This report describes the development of a numerical VCSEL model, whose goal is to both further their understanding of these complex devices and provide a tool for accurate design and data analysis.},
doi = {10.2172/378906},
url = {https://www.osti.gov/biblio/378906},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Thu Aug 01 00:00:00 EDT 1996},
month = {Thu Aug 01 00:00:00 EDT 1996}
}
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.