Plasma-induced-damage of GaN
- and others
Plasma-induced-damage often degrades the electrical and optical properties of compound semiconductor devices. Despite the fact that the binding energy of GaN is larger than that for more conventional III--V compounds, etch damage is still a concern. Photoluminescence measurements and atomic force microscopy have been used to determine the damage induced in GaN by exposure to both electron cyclotron resonance (ECR) and inductively coupled plasmas (ICP) generated Ar plasmas.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States); Department of Defense, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 373894
- Report Number(s):
- SAND-96-2022C; CONF-961040-5; ON: DE96014840; TRN: 96:024909
- Resource Relation:
- Conference: 190. meeting of the Electrochemical Society and technical exhibition, San Antonio, TX (United States), 6-11 Oct 1996; Other Information: PBD: [1996]
- Country of Publication:
- United States
- Language:
- English
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