Deposition of hetero-epitaxial In{sub 2}O{sub 3} thin films by molecular beam epitaxy
- Asahi Glass Co., Ltd., Yokohama (Japan). Research Center
- Univ. of Tokyo (Japan). Inst. of Industrial Science
- Oak Ridge National Lab., TN (United States). Solid State Div.
Highly oriented thin film In{sub 2}O{sub 3} was heteroepitaxially grown on optically polished (100) plane of single crystalline yttria stabilized zirconia (YSZ) substrate using Molecular Beam Epitaxy (MBE). Full-width at half-maximum (FWHM) of X-ray rocking-curve showed 0.08{degree} for In{sub 2}O{sub 3} 200 nm thick layers indicating that excellent uniformity orientation compared with the heteroepitaxially-grown In{sub 2}O{sub 3} epitaxially deposited by the conventional methods such as electron-beam (e-beam) evaporation or sputtering method. The minimum yield ({chi}{sub min}) of the MBE grown in In{sub 2}O{sub 3} film of Rutherford Backscattering Spectrometry (RBS) was also extremely small value 3.1%, implying the very high crystallinity.
- Research Organization:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC05-96OR22464
- OSTI ID:
- 257414
- Report Number(s):
- CONF-9605188-2; ON: DE96012082; TRN: AHC29615%%111
- Resource Relation:
- Conference: `96 MRS-J: 3. ion engineering conference, Chiba (Japan), 23-24 May 1996; Other Information: PBD: May 1996
- Country of Publication:
- United States
- Language:
- English
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