IEICE Transactions on Electronics
Online ISSN : 1745-1353
Print ISSN : 0916-8524
Special Section on Fundamentals and Applications of Advanced Semiconductor Devices
Resistance-Switching Characteristics of Si-rich Oxide Evaluated by Using Ni Nanodots as Electrodes in Conductive AFM Measurements
Akio OHTAChong LIUTakashi ARAIDaichi TAKEUCHIHai ZHANGKatsunori MAKIHARASeiichi MIYAZAKI
Author information
JOURNAL RESTRICTED ACCESS

2015 Volume E98.C Issue 5 Pages 406-410

Details
Abstract

Ni nanodots (NDs) used as nano-scale top electrodes were formed on a 10-nm-thick Si-rich oxide (SiOx)/Ni bottom electrode by exposing a 2-nm-thick Ni layer to remote H2-plasma (H2-RP) without external heating, and the resistance-switching behaviors of SiOx were investigated from current-voltage (I–V) curves. Atomic force microscope (AFM) analyses confirmed the formation of electrically isolated Ni NDs as a result of surface migration and agglomeration of Ni atoms promoted by the surface recombination of H radicals. From local I–V measurements performed by contacting a single Ni ND as a top electrode with a Rh coated Si cantilever, a distinct uni-polar type resistance switching behavior was observed repeatedly despite an average contact area between the Ni ND and the SiOx as small as ∼ 1.9 × 10-12cm2. This local I–V measurement technique is quite a simple method to evaluate the size scalability of switching properties.

Content from these authors
© 2015 The Institute of Electronics, Information and Communication Engineers
Previous article Next article
feedback
Top