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Reliability physics of ferroelectric/negative capacitance transistors for memory/logic applications: An integrative perspective

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Abstract

Despite the remarkable development in ferroelectric HfO2-based FETs, key reliability challenges (e.g., retention, endurance, etc.) may still limit their widespread adoption in memory and logic applications. In this paper, we present a simple theoretical framework—based on the Landau theory of phase transition—to design both ferroelectric FETs (FeFETs) and negative capacitance transistors (NCFETs) and investigate their reliability issues. For FeFETs, we analyze the role of interface and bulk traps on memory window closure to quantify endurance under different operating conditions. For NCFETs, we discuss the beneficial role of NC effect in reducing (or even eliminating) the persistent reliability issue of negative bias temperature instability that has plagued MOSFETs for decades. FE/NCFETs can also be affected by the Hot Atom Damage involving switching-induced bond dissociation during transient overshoot. We conclude by discussing how other FET reliability issues (e.g., TDDB, HCD, etc.) may also have to be reinterpreted for FE/NCFETs.

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Acknowledgments

The authors thank Prof. Francesco Maria Puglisi, Prof. Paolo Pavan (University of Modena), and Dr. Muhammad Masuduzzaman (Sandisk) and Dr. Kamal Karda (Purdue University and Micron Technology) for useful discussions.

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Authors and Affiliations

  1. Department of Engineering “Enzo Ferrari”, University of Modena and Reggio Emilia, via P. Vivarelli 10, 41125, Modena, Italy

    Nicolò Zagni

  2. School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN, 47906, USA

    Muhammad Ashraful Alam

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  1. Nicolò Zagni
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  2. Muhammad Ashraful Alam
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Correspondence to Nicolò Zagni or Muhammad Ashraful Alam.

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Zagni, N., Alam, M.A. Reliability physics of ferroelectric/negative capacitance transistors for memory/logic applications: An integrative perspective. Journal of Materials Research 36, 4908–4918 (2021). https://doi.org/10.1557/s43578-021-00420-1

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  • DOI: https://doi.org/10.1557/s43578-021-00420-1

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