Abstract
The first in-situ observations of initial stages of growth during Si vapour-phase homoepitaxy are reported, using the simultaneous measurement of dual-wavelength ellipsometry (364/488nm) and diffuse light scattering (488nm). Effective medium modelling shows that initial growth is nonuniform with pits present in the first 50–200Å of growth which rapidly fill in as growth proceeds. The sizes of the ellipsometric and scattering discontinuities are dependent on the extent of pre-growth roughening associated with oxide removal and finite wavelength effects become important for growth on roughened substrates.
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References
D J Robbins et al, J Crystal Growth 81, 421 (1987).
F Hottier and R Cadoret, J Crystal Growth 56, 304 (1982).
R W Collins, Appl Phys Lett 48, 843 (1986).
S Kumar, B Drevillon and C Gocfet, J Appl Phys 60, 1542 (1986).
D J Robbins and I M Young, Appl Phys Lett (in press) (1987).
D E Aspnes and A A Studna, Appl Optics 14, 220 (1975).
W Kern, Semicond International (April) 1984, 94.
G E Jellison and F A Modine, Phys Rev B 27,7466 (1983).
D E Aspnes and J B Theeten, J Electrochem Soc 127, 1359 (1980).
R W Hardeman, D J Robbins, D B Gasson and A Daw, Electrochem Soc Proc 85–7, 16 (1985).
D E Aspnes, Proc SPIE 276, 188 (1981).
W G Egan and D E Aspnes, Phys Rev B 26, 5313 (1982).
D E Aspnes, Phys Rev B 25, 1358 (1982).
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Pickering, C., Robbins, D.J., Young, I.M. et al. In-Situ Ellipsometry and Light Scattering Studies of Substrate Cleaning and Initial Layer Deposition in Low Temperature CVD of Crystalline Si. MRS Online Proceedings Library 94, 173–178 (1987). https://doi.org/10.1557/PROC-94-173
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DOI: https://doi.org/10.1557/PROC-94-173