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Either step-flow or layer-by-layer growth for AIN on SiC (0001) substrates

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Abstract

AIN was grown on 4H- or 6H-SiC (0001) on-axis substrates by plasma-assisted molecular beam epitaxy. By utilizing optimized SiC surface pretreatment, RHEED oscillations just after the growth of AIN were obtained with high reproducibility. This study focused on the growth kinetics of AIN and the correlation between kinetics and the crystalline quality of the grown layers. It was found that the growth mode changed from layer-by-layer to step-flow for high growth temperatures, while for lower temperatures the layer-by-layer growth mode persisted. The mechanism responsible for the change in growth mode is discussed. Symmetrical (0002) and asymmetrical (01–14) x-ray rocking curve measurements were carried out to evaluate the crystalline quality. For the (0002) peak, both high-temperature and low-temperature grown layers showed almost the same FWHM values. On the other hand, for the (01–14) peak, the FWHM of low-temperature grown AIN was much smaller (180 arcsec) than that of the high-temperature grown AIN (450 arcsec).

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Acknowledgments

This work is supported by 21st-century Center of Excellence Program from the Ministry of Education, Japan.

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Authors and Affiliations

  1. PRESTO “Nanostructure and Material Property”, Japan Science and Technology Agency, 4-1-8 Honcho Kawaguchi, Saitama, 332-0012, Japan

    Jun Suda

  2. Department of Electronic Science and Engineering, Kyoto University, Kyoto University Katsura Campus, Nishikyo-ku, Kyoto, 616-8510, Japan

    Jun Suda, Norio Onojima, Tsunenobu Kimoto & Hiroyuki Matsunami

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  1. Jun Suda
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  2. Norio Onojima
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  3. Tsunenobu Kimoto
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  4. Hiroyuki Matsunami
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Suda, J., Onojima, N., Kimoto, T. et al. Either step-flow or layer-by-layer growth for AIN on SiC (0001) substrates. MRS Online Proceedings Library 798, 377–382 (2003). https://doi.org/10.1557/PROC-798-Y3.4

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  • DOI: https://doi.org/10.1557/PROC-798-Y3.4

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