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The Structure of a-Si:H,F/a-Si,Ge:H,F Interfaces

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Abstract

We study the interface between un-alloyed a-Si:H,F and an a-Si0.4,Ge0.6:H,F alloy using superlattice structures. From infrared spectroscopy we estimate a width of 8 A for the excess hydrogen layer, and X-ray diffraction data give us a width of 2Å contributing to the width of the diffraction peak. Vibrational Raman scattering data show that the ratios of the number of Si-Si, Ge-Ge and Si-Ge bonds is not altered by changing the number of interfaces. This fact allows us to establish an upper limit for the interface width of 3 atomic layers, i.e. one layer in each partner plus an intermediate layer.

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Authors and Affiliations

  1. Department of Electrical Engineering, Princeton University, 08544, Princeton, New Jersey, USA

    J. P. Conde, D.-S. Shen, I. H. Campbell, P. M. Fauchet & S. Wagner

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  1. J. P. Conde
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  2. D.-S. Shen
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  3. I. H. Campbell
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  4. P. M. Fauchet
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  5. S. Wagner
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Conde, J.P., Shen, DS., Campbell, I.H. et al. The Structure of a-Si:H,F/a-Si,Ge:H,F Interfaces. MRS Online Proceedings Library 77, 629–634 (1986). https://doi.org/10.1557/PROC-77-629

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  • DOI: https://doi.org/10.1557/PROC-77-629

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