Abstract
HfO2 films have been deposited using anhydrous hafnium nitrate (Hf(NO3)4) as a precursor for atomic layer chemical vapor deposition (ALCVD). These films have been characterized using x-ray diffraction, x-ray reflectivity, atomic force microscopy, current vs. voltage, and capacitance vs. voltage measurements. An advantage of this precursor is that it produces smooth and uniform initiation of film deposition on H-terminated silicon surfaces. As deposited films remained amorphous at temperatures below ∼700°C. The effective dielectric constant of the film (neglecting quantum effects) for films less than ∼15 nm thick, was in the range of kfilm ∼ 10-11, while the HfO2 layer value was estimated to be kHfO2 ∼ 12-14. The lower than expected dielectric constant of the film stack is due in part to the presence of an interfacial layer such as HfSiOx. Excess oxygen may play a role in the lower than expected dielectric constant of the HfO2 layer. Breakdown of HfO2 films occurred at ∼5-7 MV/cm. Leakage current was lower than that of SiO2 films of comparable equivalent thickness.
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References
G.D. Wilk, R.M. Wallace, and J.M. Anthony, J. Appl. Phys. 5243, 5243 (2001).
“Front End Processes,” in International Technology Roadmap for Semiconductors, 2001 Edition, http://public.itrs.net/Files/2001ITRS/Home.htm
M.L. Green, E.P. Gusev, R. Degraeve, and E.L. Garfunkel, J. Appl. Phys. 2057, 2057 (2001).
K.J. Hubbard and D.G. Schlom, J. Mater. Res. 2757, 2757 (1996).
J. Robertson, J. Vac. Sci. Tech. B 1785, 1785 (2000).
B.H. Lee, L. Kang, W.J. Qi, R. Nieh, Y. Jeon, K. Onishi, and J.C. Lee, Tech. Digest: Inter. Elec. Dev. Meet., p. 133, (1999), Appl. Phys. 1926, 1926 (2000).
T. Ma, S.A. Campbell, R. Smith, N. Hoilien, H. Boyong, W.L. Gladfelter, C. Hobbs, D. Buchanan, C. Taylor, M. Gribelyuk, M. Tiner, M. Coppel, and J.J. Lee, IEEE Trans. Elec. Dev. 2348, 2348 (2001).
M. Copel, M. Gribelyuk, and E. Gusev, Appl. Phys. Lett. 436, 436 (2000).
C.M. Perkins, B.B. Triplett, P.C. McIntyre, K.C. Saraswat, S. Haukka, and M. Tuominen, Appl. Phys. Lett. 2357, 2357 (2001).
R.C. Smith, T. Ma, N. Hoilien, L.Y. Tsung, M.J. Bevan, L. Colombo, J. Roberts, S.A. Campbell, and W.L. Gladfelter, Adv. Mater. Opt. and Electron. 105, 105 (2000).
D.G. Colombo, D.C. Gilmer, V.G. Young, S.A. Campbell, and W.L. Gladfelter, Chem. Vap. Deposition 220, 220 (1998).
J. Park, B. K. Park, M. Cho, C. S. Hwang, K. Oh, D.Y. Yang, J. Electrochem. Soc. 149(1), G89-G94 (2002).
W. Zhu, T.P. Ma, T. Tamagawa, Y. Di, J. Kim, R. Carruthers, M. Gibson, and T. Furukawa, IEDM 2001, p. 463.
C. Hobbs, H. Tseng, K. Reid, et al., IEDM 2001 Tech. Digest, p. 651.
Y. Kim et al., IEDM 2001 Tech. Digest, p. 455.
J.F. Conley Jr, Y. Ono, D.J. Tweet, W. Zhuang, W. Gao, M.S. Kaiser, and R. Solanki, Electrochem. Soc. Lett. 5, C57-C59 (2000).
R. Gordan, J. Becker, D. Hausmann, and S. Suh, Chem. of Mat. 13, 2463-4 (2001).
E.P. Gusev, E. Cartier, M. Copel, M. Gribelyuk, D.A. Buchanan, H. Okorn-Schmidt, C. D’Emic, P. Kozlowski M. Tuominen, M. Linnermo, and S. Haukka, in Proc. of the ECS Meeting, Abstract #578 (March 2001).
Y. Ma, Y. Ono, L. Stecker, D.R. Evans, and S.T. Hsu, IEDM Tech. Digest, 149 (1999).
H. Zhang and R. Solanki, J. Electrochem. Soc. 63, 63 (2001).
S. Sayan, E. Garfunkel, and S. Zuzer, Appl. Phys. Lett. 81(12), 2135 (2002).
M. Balog, M. Schieber, M. Michman, and S. Patai, Thin Sol. Films 247, 247 (1977).
T. Suntola, Materials Science Reports 4, 261–312 (1989).
M. Ritala, M. Leskela, L. Niinisto, T. Prohaska, G. Friedbacher, and M. Grassbauer, Thin Solid Films 1, 1 (1994).
M. Tuominen, T. Kanniainen, and S. Haukka, in Electrochemical Society Proceedings Vol. 2000-9, p. 271-82 (2000).
A. Kang, P.M. Lenahan, J.F. Conley Jr, and R. Solanki, submitted to Appl. Phys. Lett.
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Conley, J.F., Ono, Y., Tweet, D.J. et al. Atomic Layer Chemical Vapor Deposition of Hafnium Oxide Using Anhydrous Hafnium Nitrate Precursor. MRS Online Proceedings Library 716, 22 (2001). https://doi.org/10.1557/PROC-716-B2.2
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DOI: https://doi.org/10.1557/PROC-716-B2.2