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Effect of pH on Chemical-Mechanical Polishing of Copper and Tantalum

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Abstract

pH has a strong effect on the polish rates of copper (Cu) and tantalum (Ta) [1]. In this paper, removal rates of Cu and Ta using aqueous slurries containing alumina and silica abrasives in H2O2-glycine solution are studied at varying pH values. It is observed that variation in the Cu and Ta removal rates is a direct result of the change in surface characteristics of the films. Surface characteristics such as presence/absence of a passivating layer and hardness of such layer vary with pH and hence result in removal rate variation. It is also shown that a favorable Cu/Ta polish rate selectivity can be obtained by adjusting the pH of the slurry.

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References

  1. S. Ramarajan, Y. Li, M. Hariharputhiran, Y.-S. Her, and S.V. Babu, Electrochem. and Solid State Letters, 3(5) (2000) 232–235

    Article  CAS  Google Scholar 

  2. Q. Luo, D.R. Campbell, and S.V. Babu, Thin Solid Films, 311 (1997) 177–182.

    Article  CAS  Google Scholar 

  3. R. Carpio, J. Fracas, and R. Jairath, Thin Solid Films, 266, 238 (1995).

    Article  CAS  Google Scholar 

  4. J.M. Steigerwald, S.P. Murarka, and R.J. Gutmann, Chemical-Mechanical Planarization of Microelectronic Materials, John Wiley & Sons, 1997.

    Book  Google Scholar 

  5. Q. Luo, and S.V. Babu, J. Electrochemical Society, 147(12), 2000.

    Google Scholar 

  6. M. Pourbaix, Atlas of Electrochemical Equilibria in Aqueous Solutions, NACE, Houston, TX (1975).

    Google Scholar 

  7. S. Ramarajan, M. Hariharputhiran, Y.-S. Her, and S.V. Babu, Surface Engineering, 15 (4), 1999.

    Google Scholar 

  8. M. Hariharputhiran, Y. Li, S. Ramarajan and S.V. Babu, Electrochemical and Solid State Letters, 3(2), 95–98 (2000).

    Article  Google Scholar 

  9. Y. Li, A. Jindal, and S.V. Babu, Proc. Electrochem. Soc. 198th Meeting, Phoenix, AZ, Oct. 22–27 (2000)

    Google Scholar 

  10. M. Hariharputhiran, J. Zhang, S. Ramarajan, J.J. Keleher, Y. Li, and S.V. Babu, J. Electrochem. Soc., 147 (10) (2000) 3820–3826

    Article  Google Scholar 

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Authors and Affiliations

  1. Department of Chemical Engineering Center For Advanced Materials Processing, Potsdam, NY, 13699, USA

    Anurag Jindal & S. V. Babu

  2. Department of Mechanical Engineering Center For Advanced Materials Processing Center For Advanced Materials Processing, Potsdam, NY, USA, Potsdam, NY, 13699, 13699, USA

    Ying Li

Authors
  1. Anurag Jindal
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  2. Ying Li
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  3. S. V. Babu
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Jindal, A., Li, Y. & Babu, S.V. Effect of pH on Chemical-Mechanical Polishing of Copper and Tantalum. MRS Online Proceedings Library 671, 68 (2001). https://doi.org/10.1557/PROC-671-M6.8

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  • DOI: https://doi.org/10.1557/PROC-671-M6.8

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