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High-Rate Growth of Stable a-Si:H

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Abstract

Correlation between the gas phase species in silane plasma measured by mass spectrometry and the properties of hydrogenated amorphous silicon (a-Si:H) films deposited by plasma enhanced chemical vapour deposition (PECVD) has been investigated. We have especially been interested in the higher-order silane related species in the plasma, whose contribution to the film growth is considered to be the cause of light-induced degradation in the film quality, especially at high growth rate. In this study, we varied excitation frequency, gas pressure and power density to vary the growth rates of a-Si:H films ranging from 2 Å/s to 20 Å/s.

Molecular density ratio of trisilane, representative of higher silane related radicals, to monosilane has shown a clear correspondence to the fill factor after light soaking of Schottky cells fabricated on the resulting films.

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References

  1. A. Matsuda and K. Tanaka, Thin Solid Films 92, 171 (1982).

    Article  CAS  Google Scholar 

  2. N. Nakamura, T. Takahama, M. Isomura, M. Nishikuni, K. Yoshida, S. Tsuda, S. Nakano, M. Ohnishi and Y. Kuwano, Jpn. J. Appl. Phys. 28, 1762 (1989).

    Article  CAS  Google Scholar 

  3. G. Ganguly and A. Matsuda, Phys. Rev. B 47, 3661 (1992).

    Article  Google Scholar 

  4. G. Lucovsky, R. J. Nemanich and J. C. Knights, Phys. Rev. B 19, 2064 (1978).

    Article  Google Scholar 

  5. I. Hailer, Appl. Phys. Lett. 37, 282 (1980).

    Article  Google Scholar 

  6. G. Turban, Y. Catherine and B. Grolleau, Thin Solid Films 67, 309 (1980).

    Article  CAS  Google Scholar 

  7. C. M. Fortmann, S. Lange, M. Farley and J. O’Dowd, Proc. IEEE Photovoltaic Spec. Conf. 19th, 296 (1987).

    Google Scholar 

  8. Y. Watanabe, M. Shiratani, H. Kawasaki, S. Singh, T. Fukuzawa, Y. Ueda and H. Ohkura, J. Vac. Sci. Technol. A 14 (1996) 540.

    Article  CAS  Google Scholar 

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Authors and Affiliations

  1. Thin Film Silicon Solar Cells Super Lab., Electrotechnical Laboratory, Ibaraki, Japan

    T. Takagi, R. Hayashi, A. Payne, W. Futako, T. Nishimoto, M. Takai, M. Kondo & A. Matsuda

Authors
  1. T. Takagi
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  2. R. Hayashi
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  3. A. Payne
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  4. W. Futako
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  5. T. Nishimoto
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  6. M. Takai
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  7. M. Kondo
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  8. A. Matsuda
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Corresponding author

Correspondence to T. Takagi.

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Takagi, T., Hayashi, R., Payne, A. et al. High-Rate Growth of Stable a-Si:H. MRS Online Proceedings Library 557, 105–114 (1999). https://doi.org/10.1557/PROC-557-105

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  • DOI: https://doi.org/10.1557/PROC-557-105

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