Preparation and Properties of Porous Bismuth Films

Abstract

The use of chemical solution routes to form inorganic thin films is a relatively new method which represents an alternative to vapor phase routes. The present study involves the use of a chemical solution route, the decomposition of metal carboxylates, to prepare bismuth thin films of controlled porosity. Such morphologies offer the opportunity to disrupt phonon transport without greatly affecting electrical conductivity and bismuth represents a well known system in which to investigate these effects. Porous bismuth thin films have been prepared using bismuth 2-ethylhexanoate (Bi[OOCCH(C₂ H₅ )C₄ H₉ ]₃ ) as the precursor in a solvent of 2-methyl- 1-propanol. The solution is deposited on glass, Kapton, silicon, alumina or magnesia substrates by spin coating and heated to between 250–300°C in hydrogen. Heat treatment temperature and time are important for controlling film microstructure as both pore volume (25 to 50%) and preferred orientation depend upon heat treatment conditions. Bismuth films (62 nm thick) with 32% porosity exhibit conductivities in the range of 150 S/cm with Seebeck coefficients comparable to that of bulk materials.