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Energy-Filtered Transmission Electron Microscopy of Multilayers in Semiconductors

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Abstract

Knowledge about compositional profiles on an atomic scale is important for semiconductor multilayers. In this paper, we attempt to quantify the Ti atomic fraction in a TixAll–xN multilayer and the total As concentrations in As δ-doped layers using energy-filtered imaging. These two materials represent materials where the characteristic energy loss edges are located in widely different energy losses with the L edge of Ti being above 450eV and that of As around 1350eV. The accuracy of the Ti atomic fraction in TixAll–xN is found to be around 10at% for specimens of uniform thickness made by focused ion beam milling, whereas the resolution and As concentration for the As containing δ-layer is found to be dominated by the signal to noise ratio.

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Authors and Affiliations

  1. Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge, CB2 3QZ, UK

    C. P. Liu, C. B. Boothroyd & C. J. Humphreys

Authors
  1. C. P. Liu
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  2. C. B. Boothroyd
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  3. C. J. Humphreys
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Liu, C.P., Boothroyd, C.B. & Humphreys, C.J. Energy-Filtered Transmission Electron Microscopy of Multilayers in Semiconductors. MRS Online Proceedings Library 523, 159–164 (1998). https://doi.org/10.1557/PROC-523-159

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  • DOI: https://doi.org/10.1557/PROC-523-159

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