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Formation of Titanium Nitride/Silicide Bilayers by Rapid Thermal Anneal in Nitrogen

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Abstract

Sputter deposited Ti films on Si and SiO2 substrates have been rapid thermal annealed in N2 at temperatures of 400–1100°C, and the reaction followed using AES, TEM, electron diffraction and sheet resistance measurements. The Ti initially becomes contaminated with oxygen before being nitrided at the surface and silicided at the interface. The oxygen is expelled from the siuicide and a TiNxO1−x/TiSix bilayer eventually results. With Si substrates, TiNxO1−x is much the thinner layer whereas the reverse is true on SiO2. Extended annealing in N2 completely converts the TiSi2 layer on Si into TiN.

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Author notes

  1. A. H. Reader

    Present address: Philips Research Labs, 5600 JA, Eindhoven, The Netherlands

Authors and Affiliations

  1. Philips Research Laboratories Sunnyvale, Signetics Corp., 811 E. Arques, Sunnyvale, CA, 94088-3409, USA

    A. E. Morgan, E. K. Broadbent & A. H. Reader

Authors
  1. A. E. Morgan
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  2. E. K. Broadbent
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  3. A. H. Reader
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Morgan, A.E., Broadbent, E.K. & Reader, A.H. Formation of Titanium Nitride/Silicide Bilayers by Rapid Thermal Anneal in Nitrogen. MRS Online Proceedings Library 52, 279–287 (1985). https://doi.org/10.1557/PROC-52-279

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  • DOI: https://doi.org/10.1557/PROC-52-279

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