Abstract
Hard amorphous hydrogenated carbon films deposited by self-bias glow discharge were implanted at room temperature with 70 keV-nitrogen ions at fluences between 2.0 and 9.0×1016 N/cm2. The implanted samples were analyzed by Raman spectroscopy, SIMS and positron annihilation spectroscopy (Doppler broadening technique with the determination of the parameterS. For samples implanted with 2.0x1016 N/cm2 the S parameter follows the vacancies depth profile predicted by Monte Carlo simulation. For higher fluences we observed a reduction in the measured value ofS. This result is discussed in terms of both hydrogen loss and structural modifications(increase of disorder at local scale and of the number of graphitic domains) induced in the carbon film by ion implantation.
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Freire, F.L., Franceschini, D.F., Achete, C.A. et al. Structural Disorder in Hard Amorphous Carbon Films Implanted with Nitrogen Ions. MRS Online Proceedings Library 396, 227 (1995). https://doi.org/10.1557/PROC-396-227
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DOI: https://doi.org/10.1557/PROC-396-227