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Comparison of the Band Gap of Porous Silicon as Measured by Photoelectron Spectroscopy and Photoluminescence

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Abstract

The peak energy of the room temperature photoluminescence of porous silicon is compared with the bandgap determined from photoelectron spectroscopy measurements for a series of porous silicon samples prepared under different conditions. The photoluminescence bandgap is found to be smaller than the photoelectron spectroscopy bandgap, but exhibits the same trend with preparation conditions. The width of both the photoluminescence spectrum and the L-absorption edge increases when the current density during the preparation is increased or the sample is allowed to soak in HF after preparation.

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Authors and Affiliations

  1. Department of Physics, University of British Columbia, Vancouver, B.C., V6T-1Z1, USA

    T. Van Buuren, S. Eisebitr, S. Patitsas, S. Ritchie & J. F. Young

  2. Department of Electrical Engineering, Vancouver, B.C., V6T-1Z1, USA

    T. Tiedje

  3. Department of Physics Simon Fraser University, Burnaby, B.C, V5A-1S6, USA

    Yuan Gao

Authors
  1. T. Van Buuren
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  2. S. Eisebitr
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  3. S. Patitsas
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  4. S. Ritchie
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  5. T. Tiedje
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  6. J. F. Young
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  7. Yuan Gao
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Van Buuren, T., Eisebitr, S., Patitsas, S. et al. Comparison of the Band Gap of Porous Silicon as Measured by Photoelectron Spectroscopy and Photoluminescence. MRS Online Proceedings Library 358, 441 (1994). https://doi.org/10.1557/PROC-358-441

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  • DOI: https://doi.org/10.1557/PROC-358-441

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