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Luminescence Processes in Si1-xGex/Si Heterostructures Grown by Chemical Vapor Deposition

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Abstract

Well-resolved band-edge exciton photoluminescence (PL) has been observed in strained Si1-xGex heterostructures grown on Si(100) by rapid thermal chemical vapor deposition. The luminescence is due to shallow-impurity bound excitons at low temperatures (under 20K) and at higher temperatures is due to free excitons or electron-hole plasmas, depending on the pump power. The luminescence can also be electrically pumped, with both the electroluminescence and PL persisting above room temperature in samples with a sufficient bandgap offset. Loss of carrier confinement and subsequent non-radiative recombination outside the Si1-xGex is found to be the reason for reduced PL and EL at high temperature.

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Acknowledgments

The authors would like to thank P.V. Schwartz, C.W. Liu, Z. Matutinovic- Krstelj, A. St. Amour, and V. Venkataraman for experimental assistance and helpful discussions. The support of NSF, ONR, and the New Jersey Commission on Science and Technology (for Princeton) and NSERC (for Simon Fraser University) is gratefully acknowledged.

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Authors and Affiliations

  1. Department of Electrical Engineering, Princeton Center for Photonic & Optoelectronic Materials (POEM), Princeton University, Princeton, NJ, 08544, USA

    J.C. Sturm, X. Xiao & Q. Mi

  2. Department of Physics, Simon Fraser University, Burnaby, B.C., V5A1S6, Canada

    L.C. Lenchyshyn & M.L.W. Thewalt

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  1. J.C. Sturm
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  2. X. Xiao
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  3. Q. Mi
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  4. L.C. Lenchyshyn
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  5. M.L.W. Thewalt
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Sturm, J., Xiao, X., Mi, Q. et al. Luminescence Processes in Si1-xGex/Si Heterostructures Grown by Chemical Vapor Deposition. MRS Online Proceedings Library 298, 69–78 (1993). https://doi.org/10.1557/PROC-298-69

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  • DOI: https://doi.org/10.1557/PROC-298-69

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