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Characterization of Ion Implanted Silicon by Spectroscopic Ellipsometry and Cross Section Transmission Electron Microscopy

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Abstract

This paper deals with the application of spectroscopic ellipsometry (SE) and cross-section transmission electron microscopy (XTEM), to the characterization of damaged surface layers in ion implanted Si single crystal. Si samples of 2–6Ω·cm resistivity and <100> orientation were implanted with 28Si+ ions in the dose range of 1.0 × 1016 − 1.5 × 1016 ions/cm2 using ion energies of 100 and 200 keV. Ion current densities were varied from 6 to 200 µA/cm2. Depth profiles of the implanted samples were evaluated from the spectroscopic ellipsometry data. These calculated profiles were compared with the TEM micrographs of the cross sections of the samples. Excellent agreement is obtained between the two characterization techniques. The characteristics of the depth profiles of the samples, as established by the two techniques, is shown to be the result of annealing occuring during implantation.

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Authors and Affiliations

  1. Materials Research Laboratory, The Pennsylvania State University, University Park, PA, 16802, USA

    P. J. Mcmarr, K. Vedam & J. Narayan

  2. Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN, 37380, USA

    J. Narayan

Authors
  1. P. J. Mcmarr
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  2. K. Vedam
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  3. J. Narayan
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Mcmarr, P.J., Vedam, K. & Narayan, J. Characterization of Ion Implanted Silicon by Spectroscopic Ellipsometry and Cross Section Transmission Electron Microscopy. MRS Online Proceedings Library 27, 299–304 (1983). https://doi.org/10.1557/PROC-27-299

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  • DOI: https://doi.org/10.1557/PROC-27-299

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