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Improvement in Wide-Gap A-SI:H For High-Efficiency Solar Cells

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Abstract

A hydrogen-plasma treatment has been used for the first time to fabricate wide-gap, high-quality a-Si:H films. The hydrogen content (CH) of a-Si:H films substantially increases by the hydrogen-plasma treatment after deposition, without deteriorating the opto-electric properties of the films. The photoconductivity (δ ph) of ≤ 10-5 Ω-1 cm-1, photosensitivity (δ ph/δ d) of > 106 and SiH2/SiH of <0.2 are achieved for a film with CH of ∼ 25 atomic %. The optical gap of the film is > 1.70 eV by the (δ h ν)1/3 plot, and is <2 eV by the Tauc's plot. The open circuit voltage of a-Si solar cells exceeds 1 V conserving the fill factor of > 0.7 when the wide-gap a-Si:H films are used as the i-layer, which proves the wide band gap and low defect density.

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Acknowledgement

This work is supported by NEDO as a part of the Sunshine Project under the Ministry of International Trade and Industry.

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Authors and Affiliations

  1. Functional Materials Research Center, SANYO Electric Co., Ltd. 1-18-13, Hashiridani, Hirakata, Osaka, 573, Japan

    Sadaji Tsuge, Yoshihiro Hishikawa, Shingo Okamoto, Manabu Sasaki, Shinya Tsuda, Shoichi Nakano & Yukinori Kuwano

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  1. Sadaji Tsuge
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  2. Yoshihiro Hishikawa
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  3. Shingo Okamoto
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  4. Manabu Sasaki
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  5. Shinya Tsuda
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  6. Shoichi Nakano
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  7. Yukinori Kuwano
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Tsuge, S., Hishikawa, Y., Okamoto, S. et al. Improvement in Wide-Gap A-SI:H For High-Efficiency Solar Cells. MRS Online Proceedings Library 258, 869–874 (1992). https://doi.org/10.1557/PROC-258-869

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  • DOI: https://doi.org/10.1557/PROC-258-869

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