Abstract
We report observations of interfacial structure and consequences for layer synthesis modes in mesotaxial Si/CoSi2/Si structures, as deduced from high resolution transmission electron microscopy (HRTEM). It is argued that relative crystal misalignments arising from the lattice parameter mismatch between the Si and CoSi2 may render classic rigid shift measurements of interfacial structure inaccurate. An alternative method for determining interfacial structure at three-dimensional precipitates by analyzing crystal stacking sequences is demonstrated.
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Acknowledgments
We would like to acknowledge D. Bahnck for assistance in TEM sample preparation, D.J. Eaglesham and D. Loretto for very useful discussions and J.M. Gibson and A. Ourmazd for access to JEOL 4000EX electron microscopes.
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Hull, R., Hsieh, Y., Short, K. et al. Interface Structure and Layer Synthesis Modes in Mesotaxial Si/Cosi2/Si Structures. MRS Online Proceedings Library 183, 91–104 (1990). https://doi.org/10.1557/PROC-183-91
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DOI: https://doi.org/10.1557/PROC-183-91