Abstract
An ultra high vacuum scanning electron microscope equipped to an MBE system is utilized to study a transient of a surface atomic structure during MBE growth of GaAs and AlGaAs by the alternate supply method. Lateral growth of a Ga-monolayer over microns is realized utilizing Ga droplets. This is confirmed by discriminating the Ga and As top layer by using the secondary electron intensity difference between the Ga and As top layer. The growth mechanism of the Ga monolayer is discussed based on the results.
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K. Yamada, N. Inoue, J. Osaka and K. Wada, presented at the 5th International Conference on Molecular Beam Epitaxy, Sapporo, 1988 (unpublished).
N. Inoue and J. Osaka, in Technical Digest of 1st Int. Meeting Advanced Processing & Characterization Technologies, Tokyo, 1989, p. 9.
J. Osaka, N. Inoue, Y. Mada, K. Yamada and K. Wada, in Proceedings ICCG-9, Sendai, 1989 (to be published in J. Crystal Growth)
J. H. Neave, B. A. Joyce, P. J. Dobson and N. Norton, Appl. Phys. A 31, 1 (1983)
J. H. Neave, B. A. Joyce and P. J. Dobson, Appl. Phys. A 34, 179 (1984)
M. Tanaka, PhD thesis, University of Tokyo, 1988.
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Osaka, J., Inoue, N. μm-Scale Lateral Growth of Ga-Monolayers Observed In-Situ by Electron Microscopy. MRS Online Proceedings Library 159, 33–38 (1989). https://doi.org/10.1557/PROC-159-33
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DOI: https://doi.org/10.1557/PROC-159-33