Abstract
We have studied heteroepitaxial growth of GaAs on Si using an AlxGa1−xP intermediate layer in an atmospheric-pressure metal organic chemical vapor deposition (NOCVD) reactor. The crystallinity of the GaAs layer depends on AlP composition(x) of the intermediate layer. The bett crystal quality of GaAs layer is obtained when the AlP composition(x) of the intermediate layer is close to 0.5. The X-ray FWHX of 180 arcs and the etch pit density (EPD) of 2.5 × 107cm−2 were obtained in this GaAs/AlGaP/Si structure.
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Noto, N., Nozaki, S., Egawa, T. et al. Growth of Gaas on Si Using Algap Intermediate Layer. MRS Online Proceedings Library 148, 247–252 (1989). https://doi.org/10.1557/PROC-148-247
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DOI: https://doi.org/10.1557/PROC-148-247