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Time-Resolved Study of Silicon during Pulsed-Laser Annealing

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Abstract

Near surface temperatures and temperature gradients have been studied in silicon during pulsed laser annealing. The investigation was carried out using nanosecond resolution x-ray diffraction measurements made at the Cornell High Energy Synchrotron Source. Thermal-induced-strain analyses of these real-time, extended Bragg scattering measurements have shown that the lattice temperature reached the melting point during 15 ns, 1.1–1.5 J/cm2 ruby laser pulses and that the temperature of the liquid-solid interface remained at that temperature throughout the high reflectivity phase, after which time the surface temperature subsided rapidly. The temperature gradients below the liquid-solid interface were found to be in the range of 107°C/cm.

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References

  1. Laser and Electron Beam Interactions with Solids, ed. by B. R. Appleton and G. K. Celler, North Holland, New York, 1982.

    Google Scholar 

  2. G. J. Galvin, M. O. Thompson, J. W. Mayer, R. B. Hammond, N. Paulter and P. S. Peercy, Phys. Rev. Lett. 48, 33 (1982).

    Article  CAS  Google Scholar 

  3. B. C. Larson, C. W. White, T. S. Noggle and D. Mills, Phys. Rev. Lett. 48, 337 (1982).

    Article  CAS  Google Scholar 

  4. B. C. Larson and J. F. Barhorst, J. Appl. Phys. 51, 3181 (1980).

    Article  CAS  Google Scholar 

  5. Int. Tables for X-Ray Crystallography, Vol. II, The Kynoch Press, Birmingham, England, 1959, p. 241.

  6. A. Fukuhara and Y. Takano, Acta Crystallogr., Sect. A33, 137 (1977).

    Article  CAS  Google Scholar 

  7. D. Lowndes, G. E. Jellison, Jr., and R. F. Wood, Phys. Rev. (in press).

  8. A. Compaan, A. Aydinli, M. C. Lee and H. W. Lo, Ref. 1, p. 43.

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Acknowledgments

We would like to thank F. W. Young, Jr., for useful discussions, R. F. Wood for making unpublished calculations available, and the CHESS staff for their help and cooperation during the experiment.

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Authors and Affiliations

  1. Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN, 37830

    B. C. Larson, C. W. White, T. S. Noggle & J. F. Barhorst

  2. Cornell High Energy Synchrotron Source and School of Applied and Engineering Physics, Cornell University, Ithaca, NY, 14850

    D. M. Mills

Authors
  1. B. C. Larson
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  2. C. W. White
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  3. T. S. Noggle
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  4. J. F. Barhorst
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  5. D. M. Mills
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Additional information

Research sponsored by the Division of Materials Sciences, U.S. Department of Energy under contract W-7405-eng-26 with Union Carbide Corporation. The CHESS portion of this research was supported by the National Science Foundation.

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Larson, B.C., White, C.W., Noggle, T.S. et al. Time-Resolved Study of Silicon during Pulsed-Laser Annealing. MRS Online Proceedings Library 13, 43–50 (1982). https://doi.org/10.1557/PROC-13-43

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  • DOI: https://doi.org/10.1557/PROC-13-43

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