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A Detailed Examination of Time-Resolved Pulsed Raman Temeperature Measurements of Laser Annealed Silicon

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Abstract

Raman temperature measurements during pulsed laser annealing of Si by Compaan and co-workers are critically examined. It has been shown previously that the Stokes to anti-Stokes ratio depends critically upon the optical properties of silicon as a function of temperature. These dependences, coupled with the large spatial and temporal temperature gradients normally found immediately after the high reflectivity phase, result in large variations in the calculated temperature depending upon the probe laser pulse width and the pulse-to-pulse and spatial variations in the annealing pulse energy density.

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References

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Authors and Affiliations

  1. Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee, 37830

    G. E. Jellison, Jr, D. H. Lowndes & R. F. Wood

Authors
  1. G. E. Jellison, Jr
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  2. D. H. Lowndes
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  3. R. F. Wood
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Jellison, Jr, G.E., Lowndes, D.H. & Wood, R.F. A Detailed Examination of Time-Resolved Pulsed Raman Temeperature Measurements of Laser Annealed Silicon. MRS Online Proceedings Library 13, 35–40 (1982). https://doi.org/10.1557/PROC-13-35

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  • DOI: https://doi.org/10.1557/PROC-13-35

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