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Passivation of N-Type Silicon by Hydrogen

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Abstract

Infrared spectroscopy has been used to study hydrogen passivation of P, As, and Sb donors in Si. The spectra show several new absorption bands due to donor-H complexes. By comparing spectra after different heat treatments it is shown directly that the passivation is due to complex formation.

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Author notes

  1. K. Bergman

    Present address: Permanent Address: Dept. of Solid State Physics, Univ. of Lund, Box 118, S-221 00, Lund, Sweden

Authors and Affiliations

  1. AT&T Bell Laboratories, Murray Hill, NJ, 07974, USA

    K. Bergman, Michael Stavola, S. J. Pearton & J. Lopata

Authors
  1. K. Bergman
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  2. Michael Stavola
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  3. S. J. Pearton
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  4. J. Lopata
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Bergman, K., Stavola, M., Pearton, S.J. et al. Passivation of N-Type Silicon by Hydrogen. MRS Online Proceedings Library 104, 281–284 (1987). https://doi.org/10.1557/PROC-104-281

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  • DOI: https://doi.org/10.1557/PROC-104-281

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