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High resistivity isolation for AlGaN/GaN HEMT using Al double-implantation

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The paper reports on the fabrication of electrical isolation for planar AlGaN/GaN high electron mobility transistor using Al double-implantation. The implantation was performed using Al+ ions with energies of 800 keV and 300 keV with doses of 1.5×1013 ion/cm2 and 1×1013 ion/cm2, respectively. Electrical measurements have shown that after implantation the sheet resistance was 1.8×1011 Ω/□ and increased to 1.17×1014 Ω/□ and 3.29×1012 Ω/□ after annealing at 400°C and 600°C respectively. Annealing at 800°C decreased the sheet resistance to 1.38×108 Ω/□. Characterization by XRD, Raman and photoluminescence spectroscopy give evidence that implantation damages the crystal lattice, yielding insulating properties. It has been demonstrated that the isolation is stable up to 600°C.

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Taube, A., Kozubal, M., Kaczmarski, J. et al. High resistivity isolation for AlGaN/GaN HEMT using Al double-implantation. MRS Online Proceedings Library 1635, 9–14 (2014). https://doi.org/10.1557/opl.2014.220

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  • DOI: https://doi.org/10.1557/opl.2014.220

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