Abstract
Polycrystalline randomly oriented CaMnO3 films were successfully deposited on sapphire substrates by soft chemistry methods. The precursor solutions were obtained from a mixture of metal acetates dissolved in acids. The Seebeck coefficient and the electrical resistivity were measured in the temperature range of 300 K < T < 1000 K. Modifications of thermal annealing procedures during the deposition of precursor layers resulted in different power factor values. Thermal annealing of CaMnO3 films at 900 °C for 48 h after four-layer depositions (route A) resulted in a pure perovskite phase with higher power factor and electrical resistivity than four-layer depositions of films annealed layer by layer at 900 °C for 48 h (route B). The studied films have negative Seebeck coefficients indicative of n-type conduction and electrical resistivities showing semiconducting behavior.
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The Swiss Federal Office of Energy (BfE) and Empa are gratefully acknowledged for financial support.
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Alfaruq, D.S., Otal, E.H., Aguirre, M.H. et al. Thermoelectric properties of CaMnO3 films obtained by soft chemistry synthesis. Journal of Materials Research 27, 985–990 (2012). https://doi.org/10.1557/jmr.2012.63
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DOI: https://doi.org/10.1557/jmr.2012.63