Abstract
ZnO films are grown by the ultrasonic spray pyrolysis method on ZnO seeding layer deposited on Si (100) by pulsed laser deposition. The resultant film possesses a columnar microstructure perpendicular to the substrate and exhibits smooth, dense, and uniform morphology. The preferred orientation along the c-axis of the film is significantly enhanced compared to that without the seeding layer. ZnO film grown on ZnO-seeded silicon exhibits higher hall mobility, lower resisitivity, and higher photoluminescence intensity.
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Zhao, JL., Li, XM., Zhang, S. et al. Highly (002)-oriented ZnO film grown by ultrasonic spray pyrolysis on ZnO-seeded Si (100) substrate. Journal of Materials Research 21, 2185–2190 (2006). https://doi.org/10.1557/jmr.2006.0291
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DOI: https://doi.org/10.1557/jmr.2006.0291