Thin n/p GaAs Junctions for Novel High-Efficiency Phototransducers Based on a Vertical Epitaxial Heterostructure Architecture

Abstract

Thin GaAs photovoltaic heterostructures are grown by MOCVD with various p-GaAs base thicknesses. The total n/p absorbing thickness is varied systematically. Output voltages up to ~1.155V were obtained for individual n/p junctions at an average illumination intensity of ~8W/cm². Novel phototransducer devices are then achieved with a vertical epitaxial heterostructure architecture, monolithically integrating 5 or more such thin n/p junctions. Around the design wavelength, the stacked heterostructure design is yielding an optimal external quantum efficiency approaching unity divided by the number of junctions. The modeled and measured conversion efficiencies are exceeding 60%. The photocarrier extraction properties are simulated for different junction thicknesses using a model based on a 3-dimensional (3D) radially-symmetric TCAD implementation of the heterostructures. The study clearly demonstrates that for such thin n/p junctions the photocarrier extraction can still be efficient due to the operation at reduced current densities and higher voltages in heterostructures enhancing electrical power extraction. With the supplementary add-on of a window layer with a reduced sheet resistance for the stacked structure, we demonstrate the possible efficient operation of phototransducers for optical inputs exceeding 150 W/cm², even for the case of devices designed without gridlines.