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Defect States in Silicon Nitride

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Abstract

The energy levels of defect centers in amorphous silicon nitride have been calculated. The results are related to recent photoemission and light-induced electron spin resonance data. The Si dangling bond is argued to be the memory trap in MNOS devices and to be responsible for the electron accumulation at interfaces with amorphous silicon and for the n-type charge-transfer doping of amorphous silicon-silicon nitride superlattices.

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Authors and Affiliations

  1. Central Electricity Research Labs., Leatherhead, Surrey, UK

    John Robertson

  2. Philips Research Labs., Redhill, Surrey, UK

    Martin J. Powell

Authors
  1. John Robertson
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  2. Martin J. Powell
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Robertson, J., Powell, M.J. Defect States in Silicon Nitride. MRS Online Proceedings Library 49, 215–222 (1985). https://doi.org/10.1557/PROC-49-215

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