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New Analytical Method of SiO2 Structure by Infrared Reflection Absorption Spectroscopy (Ir-Ras)

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Abstract

Simulation of a thin oxide RAS spectrum obtained by using the dielectric function extracted from thick oxide RAS spectra is shown to be a viable method for the comparison of oxide films of differing thickness. Bulk and near-interfacial features of thermally grown SiO2 thin films were studied by this method and it was found that the LO phonon peak at about 1255 cm−1 reflects bulk SiO2 structure and a higher reflectance between 1100 and 1200 cm−1 reflects SiO2/Si interface structure.

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Authors and Affiliations

  1. Fujitsu Ltd., 1015 Kamikodanaka, Nakahara-ku, Kawasaki, 211, Japan

    K. Ishikawa, H. Ogawa, C. Inomata, S. Fujimura & H. Mori

Authors
  1. K. Ishikawa
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  2. H. Ogawa
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  3. C. Inomata
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  4. S. Fujimura
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  5. H. Mori
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Ishikawa, K., Ogawa, H., Inomata, C. et al. New Analytical Method of SiO2 Structure by Infrared Reflection Absorption Spectroscopy (Ir-Ras). MRS Online Proceedings Library 318, 425–430 (1993). https://doi.org/10.1557/PROC-318-425

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  • DOI: https://doi.org/10.1557/PROC-318-425

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