Skip to main content
SpringerLink
Log in

Luminescence Properties of Porous Silicon

  • Published:
MRS Online Proceedings Library Aims and scope

Abstract

We report the results of a systematic study of the influence of the anodization and etching conditions, and chemical and thermal treatments on the properties of light-emitting porous silicon (PSI). PSI layers with stable, high efficiency photoluminescence (PL) tunable from the near infrared to the yellow have been obtained using p-type and n-type substrates. As the temperature drops below 100 K, the as-anodized PSI layers display striking changes in the PL spectra, which are absent in PSI layers that have received a post-growth treatment.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. L.T. Canham, Appl. Phys. Lett. 57, 1046 (1990)

    Article  CAS  Google Scholar 

  2. J.C. Vial et al, Phys. Rev. B 45, 14171 (1992)

    Article  CAS  Google Scholar 

  3. A.J. Read et al, Phys. Rev. Lett. 69, 1232 (1992); T. Ohno, K. Shiraishi and T. Ogawa, Phys. Rev. Lett. 69, 2400 (1992)

    Article  CAS  Google Scholar 

  4. M.S. Brandt et al, Solid State Commun. 81, 307 (1992)

    Article  CAS  Google Scholar 

  5. J.M. Perez et al, Appl. Phys. Lett. 61, 563 (1992)

    Article  CAS  Google Scholar 

  6. M.A. Tishler et al, Appl. Phys. Lett. 60, 639 (1992); Z.Y. Xu, M. Gal and M. Gross, Appl. Phys. Lett. 60, 1375 (1992)

    Article  Google Scholar 

  7. E. Ettedgui et al, this volume

  8. V. Petrova-Koch et al, Appl. Phys. Lett. 61, 943 (1992)

    Article  CAS  Google Scholar 

  9. G.W. ‘t Hooft et al, Appl. Phys. Lett. 61, 2346 (1992)

    Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Department of Electrical Engineering, University of Rochester, Rochester, NY, 14627

    C. Peng & P. M. Fauchet

  2. Department of Physics & Astronomy, University of Rochester, Rochester, NY, 14627

    L. Tsybeskov

Authors
  1. C. Peng
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. L. Tsybeskov
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. P. M. Fauchet
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

About this article

Cite this article

Peng, C., Tsybeskov, L. & Fauchet, P.M. Luminescence Properties of Porous Silicon. MRS Online Proceedings Library 283, 121–126 (1992). https://doi.org/10.1557/PROC-283-121

Download citation

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1557/PROC-283-121

Search

Navigation