Skip to main content
SpringerLink
Log in

Growth and Doping of GaN Films by ECR-Assisted MBE

  • Published:
MRS Online Proceedings Library Aims and scope

Abstract

We report on growth, doping, and characterization studies of GaN films produced by the Electron Cyclotron Resonance microwave plasma assisted Molecular Beam Epitaxy. The films were grown heteroepitaxially on sapphire (0001), whose surface was converted into atomically smooth AIN by plasma nitridation. The GaN films were grown in two temperature steps, a process found to promote the layer-by-layer growth mode. ECR plasma conditions to grow either n-type autodoped or semi-insulating GaN film were identified. The structure and microstructure as well as the electrical properties of these two classes of films are discussed. A systematic dependence between electron mobility and net carrier concentration was found, which predicts that the mobility of GaN with a net carrier concentration of 1014cm-3 is about 104cm2/V.s. The insulating films were intentionally doped either p-type or n-type by incorporation of Mg or Si during film growth. Hole or electron concentrations at 300K between 1018-1019cm-3 have been obtained without requiring any post-growth treatment.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. Refractory Semiconductor Materials, edited by N.A. Garjunaova and D.N. Nasledov (Consultant Bureau, New York, 1966)

    Google Scholar 

  2. Wide Band-Gap Semiconductors, Mat. Res. Soc. Symp. Proc, Vol. 242, edited by T.D. Moustakas, J.I. Pankove, and Y. Hamakura (1992).

    Google Scholar 

  3. J.I. Pankove, Mat. Res. Soc. Proc, Vol. 162, 516 (1990)

    Google Scholar 

  4. R.F. Davis, Proc. of the IEEE, 79, 702 (1991)

    Article  CAS  Google Scholar 

  5. H. Amano, N. Sawaki, I. Akasaki, and Y. Toyoda, Appl. Phys. Lett., 48, 353 (1986)

    Article  CAS  Google Scholar 

  6. H. Amano, I. Akasaki, H. Hiramatsu, N. Koide, and N. Sawaki, Thin Solid Films, 163, 415 (1988)

    Article  CAS  Google Scholar 

  7. J. Akasaki and H. Amano, reference 2, p. 383

  8. M. Asif Khan, J.N. Kuznia, J.M. Van Hove, D.T. Olson, S. Krishnankutty, R.M. Kolba, Appl. Phys. Lett., 58, 526 (1991)

    Article  Google Scholar 

  9. G. Menon, Master Thesis, Boston University (1990); G. Menon, R. Molnar, S.J. Berkowitz, and T.D. Moustakas, Bull. APS 36, 544 (1991)

    Google Scholar 

  10. T. Lei, M. Fanciulli, R.J. Molnar, T.D. Moustakas, R.J. Graham, and J. Scanlon, Appl. Phys. Lett., 59, 944 (1991)

    Article  CAS  Google Scholar 

  11. T. Lei, T.D. Moustakas, R.J. Graham, T. He, and S.R. Berkowitz, J. Appl. Phys., 71, 4933 (1992)

    Article  CAS  Google Scholar 

  12. S. Nakamura, Jpn. J. Appl. Phys. 30, L1705 (1991)

    Article  Google Scholar 

  13. M.J. Paisley, Z. Sitar, J.B. Posthill, and R.F. Davis, J. Vac. Sci. and Technol., A7, 701 (1989)

    Article  Google Scholar 

  14. G. Martin, S. Strite, J. Thornston, and H. Morkoc, Appl. Phys. Lett., 58, 2375 (1991)

    Article  CAS  Google Scholar 

  15. R.C. Powell, G.A. Tomasch, Y.W. Kim, J.A. Thornton and J.E. Greene, MRS Symp. Proc. 162, 525 (1990)

    Article  CAS  Google Scholar 

  16. H.P. Maruska and J.J. Tietjen, Appl. Phys. Lett. 15, 327 (1969)

    Article  CAS  Google Scholar 

  17. H.M. Manasevit, F.M. Erdmann, and W.I. Simpson, J. Electochem. Soc. 118, 1864 (1971)

    Article  CAS  Google Scholar 

  18. S. Yoshida, S. Misawa, Y. Fujii, S. Tanaka, S. Hayakawa, S. Gonda, and A. Itoh, J. Vac. Sci. Technol., 16, 990 (1979)

    Article  CAS  Google Scholar 

  19. J.I. Pankove, J.E. Berkeyheiser and E.A. Miller, J. Appl. Phys., 45 1280 (1974)

    Article  CAS  Google Scholar 

  20. S. Nakamura, T. Mukai, and M. Senoh, Jpn. J. Appl. Phys. L1998 (1991)

    Google Scholar 

  21. C.R. Eddy Jr, T.D. Moustakas, and J. Scanlon, J. Appl. Phys. 73 (Jan. 1993)

  22. T.D. Moustakas, R.J. Molnar, T. Lei, G. Menon, and C.R. Eddy Jr, Reference 2, p 427.

  23. T.D. Moustakas, T. Lei, and R.J. Molnar, Physica B; Condensed Matter (1993)

    Google Scholar 

  24. T. Lei and T.D. Moustakas, Reference 2, p. 433

  25. T. Lei, K.F. Ludwig, and T.D. Moustakas, J. Appl. Phys. (submitted for publication)

  26. T. Sasaki and S. Zembutsu, J. Appl. Phys. 61, 2533 (1987)

    Article  CAS  Google Scholar 

  27. R.J. Molnar, T. Lei, and T.D. Moustakas, Appl. Phys. Lett. 62 (Jan. 1993).

  28. R.J. Molnar, T. Lei, and T.D. Moustakas (this volume)

  29. M. Ilegems, J. Cryst. Growth 13/14, 360 (1972)

    Article  Google Scholar 

  30. S. Nakamura, T. Mukai, and M. Senoh, J. Appl. Phys. 71, 5543 (1992)

    Article  CAS  Google Scholar 

  31. S. Nakamura, M. Senoh, and T. Makai, Jpn. J. Appl. Phys., L1708 (1992)

    Google Scholar 

  32. R.J. Molnar and T.D. Moustakas, Appl. Phys. Lett. (submitted for publication)

  33. I. Akasaki, H. Amano, N. Koide, M. Kotaki, and K. Mannabe (to be published)

  34. N.F. Mott, T.D. Twose, Advances in Physics 10, 107 (1961)

    Article  CAS  Google Scholar 

  35. N.B. Hannay, Semiconductors (Reinhold Publishing Corp., New York, 1960)

    Google Scholar 

  36. S. Nakamura, N. Iwasa, M. Senoh, and T. Mukai, Jpn. J. Appl. Phys., 31 (1992)

Download references

Acknowledgements

This work was supported by the office of Naval Research (grant number N0014-92-j-1436). We are grateful to Karl Ludwig for collaboration in XRD, and to Max Yoder for discussions and encouragement.

Author information

Authors and Affiliations

  1. Department of Electrical, Computer, and Systems Engineering, Boston University, Molecular Beam Epitaxy Laboratory, Boston, MA, 02215, USA

    T. D. Moustakas & R. J. Molnar

Authors
  1. T. D. Moustakas
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. R. J. Molnar
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

About this article

Cite this article

Moustakas, T.D., Molnar, R.J. Growth and Doping of GaN Films by ECR-Assisted MBE. MRS Online Proceedings Library 281, 753–763 (1992). https://doi.org/10.1557/PROC-281-753

Download citation

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1557/PROC-281-753

Search

Navigation