Abstract
The formation of a 12nm thick, continuous and thermally stable COSi2 layer was described in our previous work [MRS Proc. 238, 587 (1992)]. Interdiffusion in the Co/Ti-Si multilayer system has been further studied and the initial Ti(O) thickness is shown to be a critical parameter in controlling its effectiveness as a diffusion barrier, and in modulating the Co-Si and Ti-Si compctctive reactions. Three Ti(O) and three Co layers with thickness from ~5nm 20nm were deposited sequentially, with Ti(O) as the first layer, on Si-(100) substrates by dual source thermal evaporation. The morphology of the CoSix/Si interface was strongly influenced by Ti(O) thickness from ~5nm to ~10nm, and a 12nm thick uniform CoSi2 layer with ~28μΩ-cm resistivity was produced as decribed previously. When the initial Ti(O) thickness was increased to ~20nm and the Co thickness set at ~10nm, Co diffusion was suppressed and Ti reacted with Si yielding an ~10nm amorphous TiSix layer at 550°C. This amorphous layer transformed to a 15nm thick uniform C-54 TiSi2 layer after selective removal of upper layers and a 750°C plus 800°C annealing. A flat silicide/Si interface and a ~58μΩ-cm resistivity were obtained. The significance of both thermodynamic and kinetic factors in the compctetive reactions is discussed.
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Acknowledgement
This project was supported by General Instrument Corporation. Feng Hong was also partially supported as a Graduate Fellow with the NSF-ERC for Advanced Electronic Materials Processing(NSF Grant No. CDR-8721505). The authers also would like to thank Dr. Ali Salih for usefull discussions.
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Hong, F., Patnaik, B.K. & Rozgonyi, G.A. Solid State Interaction and Nano-Scale Silicide Formation for Co/Ti Multilayers on Silicon. MRS Online Proceedings Library 260, 187–192 (1992). https://doi.org/10.1557/PROC-260-187
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DOI: https://doi.org/10.1557/PROC-260-187