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An Alternate Mechanism for Porous Si Photoluminescence: Recombination in SiHx Complexes

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Abstract

Porous silicon layers have been formed which exhibit photoluminescence (PL) peaks that do not blueshift with increasing porosity. Hydrogen desorption experiments have been performed in vacuum under anneals between 230°C–390°C. Simultaneous, in-situ PL measurements show that the PL intensity decreases and disappears with decreasing hydrogen content. Infrared spectroscopy (IR) measurements also show loss of hydride species in the same temperature range. These results indicate that hydrogen is important in the PL process. We suggest that silicon hydrides are the source of PL in porous SI.

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Authors and Affiliations

  1. Naval Research Laboratory, Washington, D.C., 20375, USA

    S. M. Prokes, O. J. Glembocki, V. M. Bermudez & R. Kaplan

  2. The Johns Hopkins University, Baltimore, MD, 21218, USA

    L. E. Friedersdorf & P. C. Searson

Authors
  1. S. M. Prokes
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  2. O. J. Glembocki
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  3. V. M. Bermudez
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  4. R. Kaplan
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  5. L. E. Friedersdorf
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  6. P. C. Searson
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Prokes, S.M., Glembocki, O.J., Bermudez, V.M. et al. An Alternate Mechanism for Porous Si Photoluminescence: Recombination in SiHx Complexes. MRS Online Proceedings Library 256, 107–110 (1991). https://doi.org/10.1557/PROC-256-107

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  • DOI: https://doi.org/10.1557/PROC-256-107

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