Abstract
Strain gradients in Al-0.5%Cu lines on a 1000Å Ti barrier layer have been measured during thermal cycling from room temperature to 400°C using X-rays from a Synchrotron Source in the Crazing Incidence Geometry. The stress gradient calculated from the strain gradient is shown at four temperatures during thermal cycling. The surface of the line is relaxed relative to the bulk during heating and more stressed during cooling. It was also found that the width direction of the line supports essentially no stress throughout the thermal cycle and that the much of the stress along the length of the line is relaxed during the first few minutes at elevated temperatures.
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Acknowledgements
The authors would like to acknowledge the support of Semiconductor Research Corporation under contract SRC 90-SP-101. Support for one of writers (Sean Brennan) is provided by the Department of Energy (DOE) Office of Basic Energy Sciences. Some work was performed at Stanford University's Center for Materials Research. Most of the experiments were performed at Stanford Synchrotron Radiation Laboratory, which is supported by the DOE, Division of Chemical Sciences. We gratefully acknowledge Professor Paul Flinn and fellow researchers Jim Bain and Shef Baker (all from Stanford) for insightful discussions. We thank Intel Corporation for providing the samples used in the experiment.
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Besser, P., Venkatraman, R., Brennen, S. et al. Calculation of Stress Gradients in Thin Al-0.5%Cu/Ti Lines from Strain Gradients Measured as a Function of Temperature Using Grazing Incidence X-Ray Scattering. MRS Online Proceedings Library 239, 233–238 (1991). https://doi.org/10.1557/PROC-239-233
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DOI: https://doi.org/10.1557/PROC-239-233