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The Role of Substrate Surface Reactions in Heteroepitaxy of PbSe on BaF2

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Abstract

A strong relationship between growth initiation temperature and resulting growth morphology has been observed in liquid phase epitaxy (LPE) of PbSe on BaF2. High quality epitaxial layers are consistently produced when growth is initiated between 600 and 660 degrees centigrade. This condition for epitaxy correlates with formation of a binary barium-selenide layer on the substrate surface resulting from a reaction between selenium and BaF2. This reaction, corraborated by visual observation and Auger electron spectroscopic (AES) analysis of the reaction product, occurs prior to PbSe layer growth when the substrate is exposed to selenium vapor as it is positioned under the growth solution. A barium-selenide reaction layer on a BaF2 substrate can catalyze nucleation by reducing deposit/substrate interface energy and or by increasing substrate surface energy. Such epitaxy-enabling substrate surface reactions can also occur during vapor deposition of IV-VI semiconductors on BaF2 substrates and may explain the widely observed epitaxial temperature phenomenon.

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Acknowledgement

I would like to thank Dr. Hans Zogg for providing some of the BaF2 substrates used in this study.

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Authors and Affiliations

  1. School of Electrical Engineering and Computer Science, University of Oklahoma, Norman, OK, 73019-0631, USA

    Patrick J. McCann

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  1. Patrick J. McCann
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McCann, P.J. The Role of Substrate Surface Reactions in Heteroepitaxy of PbSe on BaF2. MRS Online Proceedings Library 221, 289–293 (1991). https://doi.org/10.1557/PROC-221-289

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  • DOI: https://doi.org/10.1557/PROC-221-289

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