Abstract
Ion beams of keV and MeV energies have been used to bombard amorphous Si (a-Si), which had previously been annealed (‘relaxed’). Analysis by Raman spectroscopy and differential scanning calorimetry shows that when 1 out of every 20 Si atoms is displaced by a nuclear collision, the a-Si returns to its unrelaxed state and cannot be distinguished from as implanted a-Si. Moreover, the kinetics of the heat release on annealing of similarly bombarded crystalline Si (c-Si) are qualitatively identical to those of structural relaxation in a-Si. This implies that the population of ion beam induced defects in a-Si is very similar to that in c-Si. It also shows that defect annihilation is an important ingredient in the mechanism of structural relaxation of a-Si.
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Roorda, S., Sinke, W.C., Poate, J.M. et al. Changing the Structural State of Amorphous Silicon by Ion Irradiation. MRS Online Proceedings Library 157, 709–714 (1989). https://doi.org/10.1557/PROC-157-709
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DOI: https://doi.org/10.1557/PROC-157-709